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Combustion and explosion of nanostructured silicon in microsystem devices

  • Physics of Semiconductor Devices
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Abstract

Combustion and explosion in layers of nanostructured porous silicon has been studied in relation to the layer thickness and duration of sample storage after electrochemical anodization. The amount of hydrogen adsorbed on the surface of porous silicon after anodic treatment is evaluated. The amount of hydrogen accu-mulated in porous silicon is 4 wt %. Prototype microsystem devices employing the energy of the processes studied have been developed and fabricated. The combustion of porous silicon can be used as an energy source for silicon microactuators and the microexplosion can be employed both in self-destructing silicon chips and for dividing silicon wafers into separate crystals.

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References

  1. D. Kovalev, V. Y. Timoshenko, N. Kunzner, et al., Phys. Rev. Lett. 87, 68301 (2001).

    Google Scholar 

  2. S. K. Lazarouk, A. V. Dolbik, P. V. Jaguiro, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 917 (2005) [Semiconductors 39, 891 (2005)].

    Google Scholar 

  3. D. Clement, J. Diener, E. Gross, et al., Phys. Status Solidi A 202, 1357 (2005).

    Article  ADS  Google Scholar 

  4. J. Warnatz, U. Maas, and R. W. Dibble, Combustion: Physical and Chemical Fundamentals, Modeling and Simulation, Experiment, Pollutant Formation (Springer, Berlin, 2001; Fizmatlit, Moscow, 2003).

    Google Scholar 

  5. Properties of Porous Silicon, Ed. by L. T. Canham (INSPEC, London, 1997).

    Google Scholar 

  6. A. A. Kovalevskiĭ, A. V. Dolbik, S. K. Lazarouk, and V. A. Labunov, Dokl. Akad. Nauk Belarusi 49, 108 (2005).

    Google Scholar 

  7. J. Abrahamson and J. Dinnis, Nature 403, 519 (2000).

    Article  ADS  Google Scholar 

  8. S. K. Lazarouk, A. V. Dolbik, V. A. Labunov, and V. E. Borisenko, Pis’ma Zh. Éksp. Teor. Fiz. 84, 695 (2006) [JETP Lett. 84, 581 (2006)].

    Google Scholar 

  9. A. I. Egorov, S. I. Stepanov, and G. D. Shabanov, Usp. Fiz. Nauk 174, 107 (2004) [Phys. Usp. 47, 99 (2004)].

    Article  Google Scholar 

  10. A. I. Egorov and S. I. Stepanov, Zh. Tekh. Fiz. 72(12), 102 (2002) [Tech. Phys. 47, 1584 (2002)].

    Google Scholar 

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Authors and Affiliations

  1. Belarussian State University of Informatics and Radioelectronics, Minsk, 220013, Belarus

    S. K. Lazaruk, A. V. Dolbik, V. A. Labunov & V. E. Borisenko

Authors
  1. S. K. Lazaruk
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  2. A. V. Dolbik
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  3. V. A. Labunov
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  4. V. E. Borisenko
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Corresponding author

Correspondence to S. K. Lazaruk.

Additional information

Original Russian Text © S.K. Lazaruk, A. V. Dolbik, V.A. Labunov, V.E. Borisenko, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 9, pp. 1130–1134.

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Lazaruk, S.K., Dolbik, A.V., Labunov, V.A. et al. Combustion and explosion of nanostructured silicon in microsystem devices. Semiconductors 41, 1113–1116 (2007). https://doi.org/10.1134/S1063782607090175

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  • DOI: https://doi.org/10.1134/S1063782607090175

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