EPJ

About EPJ

The European Physical Journal (EPJ) is a series of peer-reviewed journals covering the whole spectrum of physics and related interdisciplinary subjects. EPJ is committed to high scientific quality in publishing and is indexed in all main citation databases.

Authors & Readers

Submission
- EPJ A
- EPJ B
- EPJ C
- EPJ D
- EPJ E
- EPJ AP
- EPJ ST
- EPJ H
- EPJ PLUS
- EPJ DS
- EPJ PV
- EPJ TI
- EPJ QT
- EPJ AM
- EPJ N
- EPJ WOC
LaTeX Macros
- EPJ A
- EPJ B
- EPJ C
- EPJ D
- EPJ E
- EPJ AP
- EPJ ST
- EPJ H
- EPJ PLUS
- EPJ DS
- EPJ TI
- EPJ QT
- EPJ WOC
TOC alert
- EPJ A
- EPJ B
- EPJ C
- EPJ D
- EPJ E
- EPJ AP
- EPJ ST
- EPJ H
- EPJ PLUS
- EPJ DS
- EPJ PV
- EPJ TI
- EPJ QT
- EPJ AM
- EPJ N
- EPJ WOC
RSS feeds
Permission Requests
Policy on Publishing Integrity
FAQ
Videos presenting EPJ

Follow @EPJscience

Latest news

EPJ B Topical Review - High critical current densities of body-centered cubic high-entropy alloy superconductors: recent research progress

Details: Published on 30 April 2025

Comparison of critical current densities among different bcc HEAs including Nb-Ti alloys at 2 K. A: NbScTiZr, B&H: Ta_1/6Nb_2/6Hf_1/6Zr_1/6Ti_1/6 thin film, C: (TaNb)_0.7(HfZrTi)_0.5,　D: Ta_1/6Nb_2/6Hf_1/6Zr_1/6Ti_1/6 annealed, E: Ta_1/6Nb_2/6Hf_1/6Zr_1/6Ti_1/6 SPS, F: Ta_1/6Nb_2/6Hf_1/6Zr_1/6Ti_1/6 as-cast

High-entropy alloys (HEAs) represent a novel paradigm in materials science. HEAs demonstrate a wide array of functionalities, including outstanding mechanical properties, superior corrosion resistance, and durable hard coatings. HEA superconductors have attracted considerable attention due to their distinctive attributes, such as robust superconductivity under extreme conditions and high critical current densities. Several body-centered cubic (bcc) HEAs have shown critical current densities comparable to those of commercial Nb-Ti superconducting alloys. HEAs possess the extraordinary capability to integrate multiple functionalities—a feature seldom observed in conventional alloys. Consequently, bcc HEA superconductors with elevated critical current densities are highly promising for practical applications in extreme environments, such as aerospace and nuclear fusion reactors, owing to the exceptional irradiation resistance characteristic of HEAs.

EPJ Web of Conferences Highlight – 22nd International Metrology Congress (CIM2025)

Details: Published on 16 April 2025

The 22^nd edition of the International Metrology Congress, France

The 22^nd International Metrology Congress, organized by the College Français de Métrologie, took place in Lyon, France, from 11–14 March 2025 in partnership with the Global Industrie exhibition. The conference hosted roughly 500 registered participants from 40 different countries.

The first International Metrology Congress (CIM) was organized in Bordeaux in 1983 by Pierre Barbier, a renowned metrology expert and founder of the Collège Français de Métrologie (CFM). The event was created to provide a platform for experts and practitioners in the field of metrology to exchange views on technical challenges, developments in standardization and emerging innovations.

EPJ PV Highlight - Contactless defects detection using modulated photoluminescence technique: model for a single Shockley-Read-Hall trap in a semiconductor thin layer

Details: Published on 16 April 2025

(a) Schematic of the Shockley Read Hall Model used in our MPL calculations. (b) MPL phase diagram for a p-type material with 1.2 eV of bandgap, including a shallow trap at 0.2 eV below conduction band. Capture coefficients Cn=1x10^-14 cm^-3s^-1, Cp=1x10^-11cm^-3s^-1, trap density is varied from 10¹² cm^-3 to 10¹⁶ cm^-3 following the arrow direction. (c) MPL phase diagram for a p-type material including a mid-gap trap of density 10¹⁴ cm^-3, capture coefficient Cn=10^-7cm^-3s^-1, Cp is varied from 10^-15 cm^-3 to 10^-7 cm^-3 following the arrow direction.

Contactless defects detection using modulated photoluminescence technique: model for a single Shockley-Read-Hall trap in a semiconductor thin layer

In order to develop efficient semiconductor devices and solar cells, there is a need to characterize electrically active defects in semiconductors. This is especially true for thin film solar cell absorbers which may be highly defective, either after deposition, or after ageing and degradation. Some efficient and well known electrical techniques such as Admittance Spectroscopy and Deep Level Transient Spectroscopy allow for determination of traps parameters. However, this requires to make junctions with the absorber (Schottky contact or PN junction) and depositing electrodes to perform measurements. We aim to develop a contactless method based on modulated photoluminescence (MPL), which may be used as a tool for material understanding, processes optimization, degradation tracking, or as a manufacturing control technique.